Silicon Carbide Schottky Diode

SCSXXXX series
SiC Schottky Barrier Diodes Featuring the Industry's Lowest VF Reduces power dissipation in PV power conditioners, industrial equipment, and servers
Silicon Carbide Schottky Diode
ROHM has recently announced the development of second-generation SiC (Silicon Carbide) Schottky barrier diodes ideal for power supply circuits in PV (photovoltaic) power conditioners, industrial equipment, servers, air conditioners, and more. This new series features the industry's lowest forward voltage (VF=1.35V※) – 10% less than conventional products – reducing power consumption considerably.

ROHM has successfully launched mass production of SiC SBDs and MOSFETs in 2010, followed by the industry's first mass production of 'Full SiC' power modules in March 2012. However, although SiC SBDs are now commonly mass-produced on a global scale, their forward voltage remains at around 1.5V, hindering energy conservation efforts. Further reductions in VF are required to minimize power dissipation.

The new SCS210AG/AM series of SiC Schottky barrier diodes reduces forward voltage while maintaining the high-speed switching characteristics unique to SiC, significantly reducing power dissipation compared with conventional Si fast recovery diodes.

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