Littelfuse

1200 V N-channel, Enhancement-mode SiC MOSFET

LSIC1MO120E0080
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package.
1200 V N-channel, Enhancement-mode SiC MOSFET
Features:
●Optimized for high frequency, high-efficiency applications
●Extremely low gate charge and output capacitance
●Low gate resistance for high-frequency switching
●Normally-off operation at all temperatures
●Ultra-low on-resistance


Applications:
●Solar Inverters
●Switch Mode Power Supplies
●UPS systems, Motor Drives
●High Voltage DC/DC Converters
●Battery Chargers and Induction Heating

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